Joint Centers of Excellence Program

Material Sciences Publications & IPS

July 2016

In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method.

May 2016

During the past few years, scientists have shown that climate change is a serious problem which mandates adequate solutions. Greenhouse gas emissions such as carbon dioxide, contribute to heat trapping in the atmosphere, which increases the global temperature. Reducing greenhouse gas emissions and carbon footprint to zero is an essential step towards maintaining 2°C tem... Continue Reading

May 2016

Monolayer WSe2 is a two-dimensional (2D) semiconductor with a direct band gap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field-effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs).

April 2016

A source line sensing (SLS) scheme is presented, along with a corresponding memory core circuit architecture, for the sensing operation of magnetoelectric random access memory (MeRAM). Compared to a conventional bit line sensing (BLS) scheme, the proposed SLS, which exploits the voltage controlled magnetic anisotropy (VCMA) effect, applies a voltage across the magnetoel... Continue Reading

April 2016

Current-induced spin-orbit torques (SOTs) in structurally asymmetric multilayers have been used to efficiently manipulate magnetization. In a structure with vertical symmetry breaking, a damping-like SOT can deterministically switch a perpendicular magnet, provided an in-plane magnetic field is applied.

March 2016

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction(MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with highdielectric constant was integrated into the tunneling oxide layer... Continue Reading

January 2016

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions(MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along wi... Continue Reading

December 2015

Semiconducting single-wall carbon nanotubes (SWCNTs) with long lengths are highly desirable for many applications such as thin-film transistors and circuits. Previously reported length sorting techniques usually require sophisticated instrumentation and are hard to scale up. In this paper, we report for the first time a general phenomenon of a length-dependent precipita... Continue Reading

November 2015

In this paper, we report polyfluorene-separated ultra-high purity semiconducting carbon nanotube radio frequency transistors with a self-aligned T-shape gate structure. Because of the ultra-high semiconducting tube purity and self-aligned T-shape gate structure, these transistors showed an excellent direct current and radio frequency performance. In regard to the direct... Continue Reading